An n-type MOSFET and an npn BJT are biased so that IC = ID = 1 mA, VGS = 1.3 V and VBE = 0.7 V. Threshold voltage for the MOSFET is 0.8 V and thermal voltage at the ambient temperature is given to be 25 mV. Transconductances of the BJT and the MOSFET are:
A. gmBJT = 40 mA/V and gmMOSFET = 4 mA/V
B. gmBJT = 40 mA/V and gmMOSFET = 2.5 mA/V
C. gmBJT = 80 mA/V and gmMOSFET = 2 mA/V
D. gmBJT = 80 mA/V and gmMOSFET = 4 mA/V
Answer: Option A
This Question Belongs to Electronics And Communications Engineering >> Analog Electronics
The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source
B. Current controlled voltage source
C. Voltage controlled voltage source
D. Voltage controlled current source
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side
B. The edge of the depletion region on the n-side
C. The p+n junction
D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load
B. Inductor between source and load
C. Capacitor between source and load
D. Either A or B
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