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Transistors MCQ Questions & Answers | Electrical Engineering

Learn Transistors MCQ questions & answers are available for a Electrical Engineering students to clear GATE exams, various technical interview, competitive examination, and another entrance exam. Transistors MCQ question is the important chapter for a Electrical Engineering and GATE students. Page-9 section-1

Each section contains 100 MCQs on Transistors .
81
A heat sink is generally used with a transistor to ___________
Discuss
Answer & Solution
Answer: Option D
No explanation is given for this question. Let's Discuss on Board
82
For germanium transistor amplifier, VCE should ___________ for faithful amplification
Discuss
Answer & Solution
Answer: Option C
Solution:
For germanium transistor amplifier, the voltage across the collector-emitter junction (VCE) should not fall below 0.7 V for faithful amplification.

This condition ensures that the transistor remains in the active region of operation, where it exhibits linear amplification characteristics. When VCE drops below approximately 0.7 V for a germanium transistor, the transistor enters the saturation region, causing distortion and non-linear amplification.

Therefore, to achieve faithful amplification in a germanium transistor amplifier, Option C: Not fall below 0.7 V is the correct requirement for VCE.
83
In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor
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Answer & Solution
Answer: Option B
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84
For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than
Discuss
Answer & Solution
Answer: Option A
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85
The operating point is also called the ___________
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Answer & Solution
Answer: Option B
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86
In the design of a biasing circuit, the value of collector load RC is determined by ___________
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Answer & Solution
Answer: Option A
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87
The operating point ___________ on the a.c. load line
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Answer & Solution
Answer: Option A
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88
In a parallel LC circuit, if the input signal frequency is increased above resonant frequency then ___________
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Answer & Solution
Answer: Option A
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89
At the base emitter junctions of a transistor, one finds ___________
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Answer & Solution
Answer: Option C
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90
The current IB is ___________
Discuss
Answer & Solution
Answer: Option A
Solution:
In a transistor, particularly in an NPN transistor, the base current (IB) is primarily due to the movement of electrons.

The base region of an NPN transistor is lightly doped and very thin, and it lies between the emitter and collector.

When the emitter-base junction is forward biased, electrons from the emitter (which is heavily doped with electrons) are injected into the base.

Most of these electrons pass through to the collector, but a small portion recombines with holes in the base. The movement of these electrons constitutes the base current (IB).

Thus, IB is made up of electron flow, making it an electron current.

Option B: hole current – Not correct in the case of NPN transistor base current.

Option C and D: donor or acceptor ion currents – These refer to immobile charges in the semiconductor lattice and do not contribute to conduction current.

Therefore, the correct and most accurate description is that IB is an electron current.