91. In a forward biased pn junction diode, the sequence of events that best describes the mechanism of current flow is
92. Electron mobility of the following intrinsic elements in descending order is:
93. The Darlington pair is mainly used for
94. The diffusion capacitance of a p-n junction diode
95. "Common Base" configuration refers to the configuration of a-
96. If the common base DC current gain of a BJT is 0.98, its common emitter DC current gain is
97. An n-type semiconductor is . . . . . . . .
98. Match items in List-I with items in List-II most suitable.
List-I
List-II
a. LED
1. Heavy doping
b. Avalanche Photodiode
2. Coherent radiation
c. Tunnel diode
3. Spontaneous emission
d. LASER
4. Current gain
| List-I | List-II |
| a. LED | 1. Heavy doping |
| b. Avalanche Photodiode | 2. Coherent radiation |
| c. Tunnel diode | 3. Spontaneous emission |
| d. LASER | 4. Current gain |
99. Drift current is:
100. If f(E) is Fermi dirac distribution function then 1-f(E) is the probability:
(Where Ef is Fermi level)
(Where Ef is Fermi level)
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