21. The depletion layer width of Junction
22. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
23. If too large current passes through the diode
24. Which of the following has highest resistivity?
25. At room temperature the current in an intrinsic semiconductor is due to
26. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is
27. Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
28. In a bipolar transistor, the base collector junction has
29. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
30. The output, V-I characteristics of an Enhancement type MOSFET has
Read More Section(Electronic Devices and Circuits)
Each Section contains maximum 100 MCQs question on Electronic Devices and Circuits. To get more questions visit other sections.