24.
In an intrinsic semiconductor, the mobility of electrons in the conduction band is

25.
At absolute zero temperature, an intrinsic semiconductor behave like an insulator because of

28.
A semiconductor specimen of breadth d, width w and carrying current I is placed in a magnetic field B to develop Hall voltage VH in a direction perpendicular to I and B. VH is NOT proportional to

30.
For smooth and reliable operation of an amplifier using BJT, it is necessary that the circuit must be properly designed from the point of view of bias stabilization, because
1. Reverse saturation current ICO increases with rise in temperature.
2. VBE decreases with rise in temperature.
3. hFE or β changes with change of temperature and replacement of the transistor.
4. hFE or β changes with change in collector supply voltage.
Which of these statements are correct?

Read More Section(Electronic Devices and Circuits)

Each Section contains maximum 100 MCQs question on Electronic Devices and Circuits. To get more questions visit other sections.