31. At higher forward voltages, a junction diode is likely to
32. Which one of the following is true with regard to photo emission?
33. The main purpose of oxidation in the IC fabrication process using silicon is:
34. When the photoresist coating (during IC fabrication) is exposed to ultraviolet light the photoresist becomes
35. A Zener diode works on the principle of
36. In a bipolar transistor biased in the forward-active region, the base current is IB = 50 µA and the collector current is IC = 2.7 mA. The value of α is:
37. For an abrupt junction varactor diode, the dependence of device capacitance (C) on applied reverse voltage (V) is given by
38. The electron and hole concentrations, n and p respectively obey the relation np = n2i where ni is the intrinsic carrier density. This expression is valid for which of the following?
39. In monolithic integrated circuits, the concentration of acceptor atoms in the region between isolation islands will be
40. Which of the following statement is true for a Schottky barrier diode?
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