51. If a donor type impurity is added to the semiconductor, then at a given temperature, the Fermi Level
52. In PN junction diode, P side is doped with acceptor concentration of 2 × 1016 cm-3, N side is doped donor concentration of 5 × 1017 cm-3. The contact potential of diode is:
Assume thermal equivalent voltage equal to 26 mV and intrinsic carrier concentration equal to 1.45 × 1010 cm-3.
Assume thermal equivalent voltage equal to 26 mV and intrinsic carrier concentration equal to 1.45 × 1010 cm-3.
53. The forward amplification factor of a transistor corresponds to
54. A diode which resembles a voltage variable capacitor is known as
55. Find the wrong statement: specific heat of a material is
56. The capacitance of a reverse-biased PN junction
57. Thermionic emission occurs in
58. The stability of fixed bias circuit
59. Most of the majority carriers from the emitter . . . . . . . .
60. The Integrated Circuit used in computers is made of which element?
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