Electronic Devices And Circuits MCQ Questions & Answers | ECE

A. Low input impedance

B. Low output impedance

C. High input impedance

D. High output impedance

E. Low value of current

A. To protect the surface of the chip from external contaminants and to allow for selective formation of the n and p regions by diffusion

B. because it facilitates the penetration of the desired impurity by diffusion

C. To control the concentration of the diffused impurities by diffusion

D. Because of its high heat conduction

A. it is the property of the material used

B. the drain end is more reverse biased than source end

C. the drain end is more forward biased than source end

D. the impurity profile varies with the distance from source

A. Less than the band gap

B. Equal to the band gap

C. Greater than the band gap

D. None of the above

A. 1.88 µm

B. 1.68 µm

C. 1.13 µm

D. 1.54 µm

A. Decreases with increasing doping concentration

B. Increases with decreasing band gap

C. Does not depend on doping concentrations

D. Increases with increase in doping concentration

A. $$\frac{{{{\text{I}}_{{\text{ph}}}}}}{{{{\text{P}}_0}}}$$

B. $$\frac{{{{\text{I}}_{{\text{ph}}}}{\text{/e}}}}{{{{\text{P}}_{\text{0}}}{\text{/(hc/}}\lambda {\text{)}}}}$$

C. $$\frac{{{{\text{P}}_{\text{0}}}}}{{{{\text{I}}_{{\text{ph}}}}}}$$

D. $$\frac{{{{\text{P}}_{\text{0}}}{\text{/(hc/}}\lambda {\text{)}}}}{{{{\text{I}}_{{\text{ph}}}}{\text{/e}}}}$$

A. Current Voltage characteristics is totally different than that of a p-n junction diode

B. The current is controlled by the diffusion of minority carriers

C. The current results from the flow of minority carriers

D. The storage time t_s is almost zero

A. 40 cm²/s

B. 4 cm²/s

C. 400 cm²/s

D. 4000 cm²/s

A. $$\tau _{\text{P}}^2$$

B. $$ - {\tau _{\text{P}}}$$

C. $$\tau _{\text{P}}^{ - 1}$$

D. $${\tau _{\text{P}}}$$