51. Which one of the following is not LED material?
52. When donor atoms are added to semiconductor, it
53. In a p-n-p transistor biased in the active region, in the n-type base, holes
54. In transistor, if electrons flow into emitter,
55. Energy band gap of an insulating materials is:
56. Effectively, how many valence electrons are there in each atom within a silicon crystal?
57. Which of the following are essentials of a transistor biasing circuit?
1. Proper zero signal collector current flow
2. VCE should not fall below 0.5 V for Germanium and 1 V for Silicon
3. Ensure stabilization of operating point
4. Loading to the source
1. Proper zero signal collector current flow
2. VCE should not fall below 0.5 V for Germanium and 1 V for Silicon
3. Ensure stabilization of operating point
4. Loading to the source
58. Which one of the following is the exact expression for ICEO (i.e. collector to emitter current with base open) in a junction transistor?
(Where ICBO is the collector to base current with emitter open, and α is the common base current gain)
(Where ICBO is the collector to base current with emitter open, and α is the common base current gain)
59. The light output of LED varies as (Current)n, the value of n is about
60. Which one of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?
Eg is the band gap, A is pre-factor's k is Boltzmann constant.
Eg is the band gap, A is pre-factor's k is Boltzmann constant.
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