Electronic Devices And Circuits MCQ Questions & Answers | ECE

A. P-type

B. N-type

C. Intrinsic

D. Highly degenerated

A. depletion width in N-region will increase and contact potential will decrease

B. depletion width in P-region and N-region will decrease while contact potential remains constant

C. depletion width in P-region will decrease and contact potential will increase

D. None of the above

A. zero current flow at zero input voltage bias

B. current flow only when a positive input threshold voltage is crossed

C. current flow only when a negative input cut-off voltage bias is crossed

D. no cut-off input voltage

A. Intrinsic and extrinsic semiconductors have negative temperature coefficient and conductors have positive temperature coefficient

B. Conductors and extrinsic semiconductors have negative temperature coefficient and intrinsic semiconductors have positive temperature coefficient

C. Insulators and semiconductors have positive temperature coefficient whereas conductors have negative temperature coefficient

D. Conductors and extrinsic semiconductors have positive temperature coefficient and pure semiconductors have negative temperature coefficient

A. For an N-type substrate, a negative voltage is applied and accumulation occurs

B. For a P-type substrate, a negative voltage is applied and accumulation occurs

C. For an N-type substrate, a positive voltage is applied and accumulation occurs

D. For a P-type substrate, a positive voltage is applied and an N-type inversion layer is formed

A. Resistance

B. Reactance

C. Concentration of carrier

D. Temperature

A. 10°K rise in temperature

B. 10°C rise in temperature

C. 2°C rise in temperature

D. 10°F rise in temperature

A. Few nanoampers

B. Few microampers

C. Few hundred microampers

D. Few milliamperes

A. 10°C/W

B. 100°C/W

C. 1000°C/W

D. 10,000°C/W

A. 1127.27 nm, 1850.75 nm

B. 1850.27 nm, 2167.91 nm

C. 456.12 nm, 1127.27 nm

D. 1315.45 nm, 1850.75 nm