61.
Consider a silicon sample at T = 300 K, with a uniform donor density Nd = 5 × 1016 cm-3 illuminated uniformly such that the optical generation rate is Gopt = 1.5 × 1020 cm-3 s-1 throughout the sample. The incident radiation is turned off at t = 0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are τp0 = 0.1 µs and τn0 = 0.5 µs.
The hole concentration at t = 0 and the hole concentration at t = 0.3 µs, respectively, are
Electronic Devices and Circuits mcq question image

64.
The CMOS inverter can be used as an amplifier when:

65.
GaAs has bandgap energy of 1.42 eV. The material would produce photon output at a wavelength of (Planck's constant = 6.625 × 10-34 J - s, q = 1.6 × 10-19 C )

69.
What is the most noticeable effect of a small increase in temperature in the common emitter connected BJT?

70.
Consider the following statements:
1. The radiation falling on a photodiode is primarily a minority carrier injector.
2. The short-circuit current of a reverse biased photodiode under illumination varies exponentially with light intensity.
3. The photo voltage emf of an open-circuited photodiode varies logarithmically with the light generated short-circuit current.
4. The spectral response of a photodiode does not depend upon the frequency of the incident light.
Which of these statements are correct?

Read More Section(Electronic Devices and Circuits)

Each Section contains maximum 100 MCQs question on Electronic Devices and Circuits. To get more questions visit other sections.