61. A silicon sample A is doped with 1018atoms/cm3 of Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is
62. Which is the diode used for measuring light intensity?
63. The drift of a hole in a semiconductor is brought by-
64. The width of the energy band depends on which of the following?
65. Silicon is not suitable for fabrication of light emitting diodes because it is
66. Bulk resistance of a diode is
67. Calculate the reverse resistance of a Si diode when the reverse voltage is 50 V and the current is 100 nA.
68. The Fermi level in a p-type semiconductor lies close to
69. Match List-I with List-II and select the correct answer using the options given below:
List-I (Type of Conductor)
List-II (Position of Fermi Level)
a. n-type semiconductor
1. Middle of band gap
b. p-type semiconductor
2. Above conduction band
c. Intrinsic semiconductor
3. Near but below conduction band
d. Degenerate n-type semiconductor
4. Near but above valence band
List-I (Type of Conductor) | List-II (Position of Fermi Level) |
a. n-type semiconductor | 1. Middle of band gap |
b. p-type semiconductor | 2. Above conduction band |
c. Intrinsic semiconductor | 3. Near but below conduction band |
d. Degenerate n-type semiconductor | 4. Near but above valence band |
70. A good ohmic contact on P-type semiconductor chip is formed by introducing
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