71. A reverse-biased diode placed in parallel with the base-emitter junction makes the circuit insensitive to variations in . . . . . . . . with changes in temperature.
72. For ideal zener diode, the voltage drop across the diode is equal to
73. A Si wafer is doped with 1016 P atoms/cm3. Calculate the equilibrium hole concentration p0 at 300 K. Assume ni = 1.5 × 1010 cm-3 and Nd >> ni.
74. Which of the following is referred to as majority carriers in a p-type material?
75. Consider the following statements used in respect of the phenomenon- Population Inversion:
1. It means population in a higher state is higher than that in a lower state
2. It is observed under thermal equilibrium
3. It increases the rate of spontaneous emission
4. It increases the rate of stimulated emission
Which of the statements given above are correct?
1. It means population in a higher state is higher than that in a lower state 2. It is observed under thermal equilibrium
3. It increases the rate of spontaneous emission
4. It increases the rate of stimulated emission
Which of the statements given above are correct?
76. The maximum number of electrons which the valence shell of an atom can have is
77. A Silicon PN junction diode under reverse bias has depletion region width 10 µm. The relative permittivity Silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 × 10-12 F/m. The depletion capacitance of the diode per square meter is
78. The leakage current in a silicon transistor is about . . . . . . . . the leakage current in germanium transistor
79. The threshold voltage of an n-channel MOSFET can be increased by
80. The frequency spectrum of an aperiodic signal is
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