21. The n-well collector is formed by . . . . . . . . .
22. The current Ids . . . . . . . . as Vds increases.
23. As die size shrinks, the complexity of making the photomasks . . . . . . . .
24. In BiCMOS, MOS switches are used to . . . . . . . .
25. Fast gate can be built by keeping . . . . . . . .
26. If the gate is given sufficiently large charge, electrons will be attracted to . . . . . . . .
27. CMOS technology is used in developing which of the following?
28. What is the condition for non conducting mode?
29. For depletion mode transistor, gate should be connected to . . . . . . . .
30. The MOSFETS are arranged in this configuration to provide . . . . . . . .
Read More Section(VLSI Design and Testing)
Each Section contains maximum 100 MCQs question on VLSI Design and Testing. To get more questions visit other sections.