31. Increasing fan-out . . . . . . . . the propagation delay.
32. Pass transistors are transistors used as . . . . . . . .
33. What is the disadvantage of the MOS device?
34. Ids depends on . . . . . . . .
35. BiCMOS inverter requires high load current sourcing.
36. Surface mobility depends on . . . . . . . .
37. Heavily doped polysilicon is deposited using . . . . . . . .
38. Substrate doping level should be decreased to avoid the latch-up effect.
39. The transistors used in BiCMOS are . . . . . . . .
40. The . . . . . . . . is used to reduce the resistivity of poly silicon.
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