51. BJT gain should be . . . . . . . . to avoid latch-up effect.
52. The difficulty in achieving high doping concentration leads to . . . . . . . . .
53. Eds is given by . . . . . . . .
54. Photoresist layer is formed using . . . . . . . .
55. How many transistors might bring up latch up effect in p-well structure?
56. What is the condition for non saturated region?
57. If βn = βp, then Vin is equal to
58. BiCMOS is . . . . . . . .
59. When the threshold voltage is more, leakage current will be?
60. A fast circuit requires . . . . . . . . .
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