81. Source and drain in nMOS device are isolated by . . . . . . . .
82. P-well doping concentration and depth will affect the . . . . . . . .
83. BiCMOS has . . . . . . . . standby leakage current.
84. Velocity can be given as . . . . . . . .
85. In BiCMOS, the analysis of the operation of BJT is well explained by . . . . . . . .
86. Inverters are essential for . . . . . . . .
87. CMOS inverter has . . . . . . . . output impedance.
88. Sudden transient in power can cause latch-up.
89. In bipolar transistor, its quality can be improved by . . . . . . . .
90. . . . . . . . . is used to deal with effect of variation.
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