The temperature dependence of the electrical conductivity σ of two intrinsic semiconductors A and B is shown in the figure. If EA and EB are the band gaps of A and B respectively, which one of the following is true?
An n-type semiconductor has an electron concentration of 3 × 1020 m-3. If the electron drift velocity is 100 m/s in an electric field of 200 V/m, the conductivity (in $${\Omega ^{ - 1}}$$ m-1) of this material is
For a NaCI crystal, the cell-edge a = 0.563 nm. The smallest angle at which Bragg reflection can occur corresponds to a set of planes whose indices are
An intrinsic semiconductor with mass of a hole mh, and mass of an electron me is at a finite temperature T. If the top of the valence band energy is Ev and the bottom of the conduction band energy is Ec, the Fermi energy of the semiconductor is
A superconducting ring is cooled in the presence of a magnetic field below its critical temperature (Tc). The total magnetic flux that passes through the ring is