A lateral pnp device has base width of 10 µ and diffusion coefficient for base region is 20 cm²/sec. The base transit time is . . . . . . . .

A. Metals B. Semiconductors C. Insulators D. All of the above

A. Drift of holes B. Diffusion of holes C. Drift of electrons D. Diffusion of electrons

A. Both A and R are true and R is correct explanation of A B. Both A and R are true but R is not a correct explanation of A C. A is true but R is false D. A is false but R is true

A. Forward bias voltage B. Potential barrier C. Rate of thermal generation of electron hole pairs D. None of the above