A semi conductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with ND = 1019/cm3. If the excess electron concentration in the steady state is ∆n = 1015/cm3 and if τp = 10µsec. (minority carrier life time) the generation rate due to irradiation
A. is 1020 e-h pairs/cm3/s
B. is 1024 e-h pairs/cm3/s
C. is 1010 e-h pairs/cm3/s
D. cannot be determined, the given data is insufficient
Answer: Option A
This Question Belongs to Electronics And Communications Engineering >> Electronic Devices And Circuits
The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals
B. Semiconductors
C. Insulators
D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage
B. Potential barrier
C. Rate of thermal generation of electron hole pairs
D. None of the above
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