An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased
A. The number of free electrons increases
B. The number of free electrons increases but the number of holes decreases
C. The number of free electrons and holes increase by the same amount
D. The number of free electrons and holes increase but not by the same amount
Answer: Option C
Solution (By Examveda Team)
In an intrinsic semiconductor like silicon,the number of free electrons is equal to the number of holes.
This is because electrons are freed when a covalent bond is broken,
creating both a free electron and a hole (a missing electron in the bond).
As the temperature increases,
more covalent bonds are broken due to increased thermal energy.
This generates more electron-hole pairs.
For every broken bond, one electron and one hole are created.
Therefore, the number of free electrons and holes increases,
and they increase by the same amount because they are generated in pairs.
So, the correct answer is Option C.
This Question Belongs to Electronics And Communications Engineering >> Electronic Devices And Circuits
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Comments (1)
The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals
B. Semiconductors
C. Insulators
D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage
B. Potential barrier
C. Rate of thermal generation of electron hole pairs
D. None of the above
Because in intrinsic semiconductor there are equal number of electrons and holes so when we increses temprature then number of electrons and holes increses of same amount