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An n-type silicon sample of 10-3 m length and 10-10 m2...

This question belongs to Electronics And Communications Engineering Electronic Devices And Circuits
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An n-type silicon sample of 10-3 m length and 10-10 m2 cross sectional area has an impurity concentration of 5 × 1020 atom/m3. If mobility of majority carries is 0.125 m2/v-sec, then the resistance of the sample will be . . . . . . . .

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Correct Answer: Option B
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