Assuming that the electron mobility in intrinsic silicon is 1500 cm²/V-Sec at room temperature (T = 300 K and the corresponding 'volt equivalent of temperature' V_T = 25.9 mV, what is the approximate value of the electron diffusion constant?

A. Metals B. Semiconductors C. Insulators D. All of the above

A. Drift of holes B. Diffusion of holes C. Drift of electrons D. Diffusion of electrons

A. Both A and R are true and R is correct explanation of A B. Both A and R are true but R is not a correct explanation of A C. A is true but R is false D. A is false but R is true

A. Forward bias voltage B. Potential barrier C. Rate of thermal generation of electron hole pairs D. None of the above