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At a given temperature a semiconductor with intrinsic carrier concentration ni...

This question belongs to Electronics And Communications Engineering Electronic Devices And Circuits
Electronic Devices and Circuits
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At a given temperature a semiconductor with intrinsic carrier concentration ni = 1016/m3 is doped with a donor of dopant concentration ND = 1026/m3. Temperature remaining the same the hole concentration in the doped semiconductor is

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Correct Answer: Option D
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