Consider the following
1. Cheaper method
2. Low residual oxygen content in the grown crystal is possible
3. Uniform doping is possible
4. Larger diameter crystals can be grown
Which of the above are the advantages of the float zone (FZ) method over the Czochralski (CZ) method in single crystal growth of silicon?

A. 1 and 2

B. 2 and 3

C. 3 and 4

D. 1 and 4

Answer: Option B