Consider the following statements S1 and S2. S1: The threshold voltage (VT) of a MOS capacitor decreases with increase in gate oxide thickness. S2: The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration. Which one of the following is correct?

This question belongs to Electronics And Communications Engineering Electronic Devices And Circuits

Electronic Devices and Circuits

Consider the following statements S₁ and S₂.
S₁: The threshold voltage (V_T) of a MOS capacitor decreases with increase in gate oxide thickness.
S₂: The threshold voltage (V_T) of a MOS capacitor decreases with increase in substrate doping concentration.
Which one of the following is correct?

A) S₁ is FALSE and S₂ is TRUE B) Both S₁ and S₂ are TRUE C) Both S₁ and S₂ are FALSE D) S₁ is TRUE and S₂ is FALSE

Answer & Solution

Correct Answer: Option C

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