For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
Answer: Option B
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The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals
B. Semiconductors
C. Insulators
D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage
B. Potential barrier
C. Rate of thermal generation of electron hole pairs
D. None of the above
bcuz base has more concentration of holes and collector & emitter has low concentration of holes. so the main purpose of current in the base will be diffusion of holes bcuz diffusion occurs due to difference of concentration and goes from higher concentration to lower concentration
the Fermi level of metals is very near to conduction band or inside conduction band so the gap between conduction band and valence bend is near to zero
where as in semiconductor its near 4 e volts and in insulator its more than 5 e volt .