For smooth and reliable operation of an amplifier using BJT, it is necessary that the circuit must be properly designed from the point of view of bias stabilization, because
1. Reverse saturation current ICO increases with rise in temperature.
2. VBE decreases with rise in temperature.
3. hFE or β changes with change of temperature and replacement of the transistor.
4. hFE or β changes with change in collector supply voltage.
Which of these statements are correct?
A. 1, 2 and 3 only
B. 1, 2 and 4 only
C. 2, 3 and 4 only
D. 1, 2, 3 and 4
Answer: Option A
This Question Belongs to Electronics And Communications Engineering >> Electronic Devices And Circuits
The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals
B. Semiconductors
C. Insulators
D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage
B. Potential barrier
C. Rate of thermal generation of electron hole pairs
D. None of the above
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