List-I is four different semiconductor devices. Match each device in List-I with its characteristic property in List-II.
| List-I | List-II |
| a. BJT | 1. Population inversion |
| b. MOS capacitor | 2. Pinch-off voltage |
| c. LASER diode | 3. Early effect |
| d. JFFT | 4. Flat-band voltage |
A. a-2, b-1, c-4, d-2
B. a-1, b-4, c-3, d-2
C. a-3, b-4, c-1, d-2
D. a-3, b-2, c-1, d-4
Answer: Option C
This Question Belongs to Electronics And Communications Engineering >> Electronic Devices And Circuits
The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals
B. Semiconductors
C. Insulators
D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage
B. Potential barrier
C. Rate of thermal generation of electron hole pairs
D. None of the above
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