Match List-I with List-II and select the correct answer using the options given below:
| List-I (Material) | List-II (Energy Level) |
| a. p-type semiconductor at 0K temperature the conduction | 1. Donor energy level is close to the conduction band |
| b. Intrinsic semiconductor at 0K temperature | 2. Acceptor energy level is close to the valence band |
| c. n-type semiconductor at room temperature | 3. Fermi-level is very close to valence band |
| d. p-type semiconductor at room temperature | 4. Fermi-level is half way between the valence band the conduction band |
A. a-1, b-2, c-3, d-4
B. a-3, b-4, c-1, d-2
C. a-1, b-4, c-3, d-2
D. a-3, b-2, c-1, d-4
Answer: Option B
This Question Belongs to Electronics And Communications Engineering >> Electronic Devices And Circuits
The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals
B. Semiconductors
C. Insulators
D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage
B. Potential barrier
C. Rate of thermal generation of electron hole pairs
D. None of the above
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