The depletion layer width of Junction
A. Decreases with light doping
B. Is independent of applied voltage
C. Is increased under reverse bias
D. Increases with heavy doping
Answer: Option C
Solution (By Examveda Team)
The question asks about the depletion layer width in a junction (like a diode). Think of the depletion layer as a region with very few free charge carriers.Let's look at each option:
Option A: Decreases with light doping
This is incorrect. Lighter doping means fewer charge carriers are available. To create the depletion region, more of the semiconductor needs to be depleted of its free carriers, so a lighter doping requires a *wider* depletion region.
Option B: Is independent of applied voltage
This is incorrect. The width of the depletion layer *definitely* changes with applied voltage. Applying a voltage will affect how easily charge carriers can move across the junction, and thus the size of the depletion region.
Option C: Is increased under reverse bias
This is correct. Reverse bias *widens* the depletion layer. Applying a reverse voltage pulls the charge carriers away from the junction, making the depletion region bigger and offering greater resistance to current flow.
Option D: Increases with heavy doping
This is incorrect. Heavier doping means more charge carriers are available. Only a *narrow* depletion region needs to be created to deplete the available carriers.
Therefore, the answer is Option C.
This Question Belongs to Electronics And Communications Engineering >> Electronic Devices And Circuits
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Comments (2)
The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals
B. Semiconductors
C. Insulators
D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage
B. Potential barrier
C. Rate of thermal generation of electron hole pairs
D. None of the above
When we apply reverse bias voltage then the junction potential increses so the depletion layer increses
In Forward bias depletion layer has narrow width
In reverse bias depletion layer has wide width.