The doping concentration on the p-side and n-side of a silicon diode are 1 × 1016 cm-3, and 1 × 1017 cm-3 respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon ni = 1.5 × 1010 cm-3 and $$\frac{{{\text{kT}}}}{{\text{q}}}$$ = 26mV. The electron concentration at the edge of the depletion region on the p-side is
A. 2.3 × 109 cm-3
B. 1 × 1016 cm-3
C. 1 × 1017 cm-3
D. 2.25 × 106 cm-3
Answer: Option A
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