The forward amplification factor of a transistor corresponds to
A. the power gain of CE amplifier
B. the current gain of CB amplifier
C. the voltage gain of CC amplifier
D. the voltage gain of CE amplifier
Answer: Option B
Solution (By Examveda Team)
In transistor configurations, different parameters are used to describe amplification properties.Forward amplification factor is denoted by α (alpha) and it represents the current gain in Common Base (CB) configuration.
It is defined as the ratio of collector current to emitter current:
α = Ic / Ie
The value of α is always less than 1 but very close to it (typically between 0.95 and 0.99).
Option A: Incorrect, because power gain of CE amplifier depends on both current and voltage gain, not on forward amplification factor.
Option C: Incorrect, because CC amplifier has a voltage gain nearly equal to 1, which is not related to forward amplification factor.
Option D: Incorrect, because voltage gain of CE amplifier is different and not defined by α.
Thus, the forward amplification factor of a transistor corresponds to the current gain of CB amplifier.
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Comments (1)
The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals
B. Semiconductors
C. Insulators
D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage
B. Potential barrier
C. Rate of thermal generation of electron hole pairs
D. None of the above

the forward amplification factor is related to current gain of common base and common emitter and common collector so in this question the suitable answer is current gain of cb amplifier