Which one of the following statements is correct in respect of the use of Direct Gap (DG) and Indirect Gap (IG) semiconductors in fabrication of Light Emitting diode?
A. Both DG and IG semiconductors are suitable
B. Only DG semiconductor is suitable
C. DG semiconductor is suitable and some IG materials having proper dopants are also used
D. Only IG semiconductors are suitable
Answer: Option B
This Question Belongs to Electronics And Communications Engineering >> Electronic Devices And Circuits
The forbidden energy gap between the valence band and conduction band will be least in case of
A. Metals
B. Semiconductors
C. Insulators
D. All of the above
For a NPN bipolar transistor, what is the main stream of current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
For a P-N diode, the number of minority carriers crossing the junction depends on
A. Forward bias voltage
B. Potential barrier
C. Rate of thermal generation of electron hole pairs
D. None of the above
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