A monolithic metal oxide semiconductor (MOS) non-polarized capacitor which is a parallel plate capacitor with SiO2 as dielectric. A surface thin film of metal (aluminum) is the top plate. The bottom plate consists of the heavily doped n* region that is formed during emitter diffusion. What is the typical value of
capacitance for an oxide thickness of 500 Å of this MOS capacitor?
Take the permittivity of dielectric (εr) as 4.
A. 0.1 pF/mil2
B. 0.2 pF/mil2
C. 0.3 pF/mil2
D. 0.4 pF/mil2
Answer: Option D
This Question Belongs to Electronics And Communications Engineering >> Analog Electronics
The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source
B. Current controlled voltage source
C. Voltage controlled voltage source
D. Voltage controlled current source
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side
B. The edge of the depletion region on the n-side
C. The p+n junction
D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load
B. Inductor between source and load
C. Capacitor between source and load
D. Either A or B
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