A monolithic metal oxide semiconductor (MOS) non-polarized capacitor which is a...

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A monolithic metal oxide semiconductor (MOS) non-polarized capacitor which is a parallel plate capacitor with SiO₂ as dielectric. A surface thin film of metal (aluminum) is the top plate. The bottom plate consists of the heavily doped n* region that is formed during emitter diffusion. What is the typical value of capacitance for an oxide thickness of 500 Å of this MOS capacitor?
Take the permittivity of dielectric (ε_r) as 4.

A. 0.1 pF/mil²

B. 0.2 pF/mil²

C. 0.3 pF/mil²

D. 0.4 pF/mil²

Answer: Option D

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