ExamVeda
Login
Home

A monolithic metal oxide semiconductor (MOS) non-polarized capacitor which is a...

This question belongs to Electronics And Communications Engineering Analog Electronics
Analog Electronics
?

A monolithic metal oxide semiconductor (MOS) non-polarized capacitor which is a parallel plate capacitor with SiO2 as dielectric. A surface thin film of metal (aluminum) is the top plate. The bottom plate consists of the heavily doped n* region that is formed during emitter diffusion. What is the typical value of capacitance for an oxide thickness of 500 Å of this MOS capacitor?
Take the permittivity of dielectric (εr) as 4.

Answer & Solution
Correct Answer: Option D
Let's discuss the solution. Join the discussion
Examveda
Question posted by Examveda
Community

Join the Discussion

No comments yet Be the first to discuss this question.
Keep Learning

Related Questions on Analog Electronics

The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source B. Current controlled voltage source C. Voltage controlled voltage source D. Voltage controlled current source
In a CB amplifier the maximum efficiency could be
A. 99% B. 85% C. 50% D. 25%
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side B. The edge of the depletion region on the n-side C. The p+n junction D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load B. Inductor between source and load C. Capacitor between source and load D. Either A or B
More Related Questions on Analog Electronics