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A voltage VG is applied across a MOS capacitor with metal...

This question belongs to Electronics And Communications Engineering Analog Electronics
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A voltage VG is applied across a MOS capacitor with metal gate and p-type silicon substrate at T = 300 K. The inversion carrier density (in number of carriers per unit area) for VG = 0.8 V is 2 × 1011 cm-2. For VG = 1.3 V, the inversion carrier density is 4 × 1011 cm-2. What is the value of the inversion carrier density for VG = 1.8 V?

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Correct Answer: Option B
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