An n-channel enhancement mode MOSFET is biased at VGS VTH and...

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An n-channel enhancement mode MOSFET is biased at V_GS > V_TH and V_DS > (V_GS - V_TH), where V_GS is the gate-to-source voltage. V_DS is the drain-to-source voltage and V_TH is the threshold voltage. Considering channel length modulation effect be significant, the MOSFET behaves as a

A. Voltage source with zero output impedance

B. Voltage source with non-zero output impedance

C. Current source with finite output impedance

D. Current source with infinite output impedance

Answer: Option C

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