An n-channel enhancement mode MOSFET is biased at VGS > VTH and VDS > (VGS - VTH), where VGS is the gate-to-source voltage. VDS is the drain-to-source voltage and VTH is the threshold voltage. Considering channel length modulation effect be significant, the MOSFET behaves as a
A. Voltage source with zero output impedance
B. Voltage source with non-zero output impedance
C. Current source with finite output impedance
D. Current source with infinite output impedance
Answer: Option C
This Question Belongs to Electronics And Communications Engineering >> Analog Electronics
The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source
B. Current controlled voltage source
C. Voltage controlled voltage source
D. Voltage controlled current source
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side
B. The edge of the depletion region on the n-side
C. The p+n junction
D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load
B. Inductor between source and load
C. Capacitor between source and load
D. Either A or B
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