An n-channel JFET has $${I_{{\text{DSS}}}} = 2\,{\text{mA}}$$ and V_p = -4 v. Its transconductance g_m = in (mA/V) for an applied gate to source voltage V_GS = -2 v is

A) 0.25 B) 0.5 C) 0.75 D) 1

Answer & Solution

Correct Answer: Option B

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7 Comments

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Charan Kumar 3 years ago

gm = go(1-vgs/vp)

go = 2 idss/|vp|
= 2*0.002/4 = 0.001
gm = 0.001(1- (-2/-4))
=0.005 = 0.5mA/V

Jayvee Semetara 5 years ago

n channel JFET
𝑰𝑫𝑺 = 𝟐 𝒎𝑨
𝑽𝑫𝑺 = −𝟐 𝑽
The expression for gm is given as
𝒈𝒎 =
𝟐 𝑰𝑫𝑺𝑺
|𝑽𝑷|
[𝟏 −
𝑽𝑮𝑺
𝑽𝑷
]
𝒈𝒎 =
𝟐 × 𝟐 × 𝟏𝟎−𝟑
|−𝟒|
[𝟏 −
(−𝟐)
(−𝟒)
]
= 𝟎. 𝟓 𝒎𝑨/𝑽
Option (b)

Sonu Sharma 6 years ago

I'd=Idss (1-Vgs/Vp)2
Id=1/2ma
Gm=I'd/Vgs
Gm=1/4

Sonu Sharma 6 years ago

I'd=Idss (1-Vgs/Vp)2
Id=1/2ma
Gm=I'd/Vgs
Gm=1/4

Vijaya Durga 6 years ago

Id= Idss(1 - Vgs/Vp)2 = 0.5mA

IT_25_PREETI_GUPTA 7 years ago

Ans should be 0.75.

Jora Arulious 8 years ago

Can you please provide the solution

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An n-channel JFET has I text DSS = 2 text mA...

An n-channel JFET has $${I_{{\text{DSS}}}} = 2\,{\text{mA}}$$ and Vp = -4 v. Its transconductance gm = in (mA/V) for an applied gate to source voltage VGS = -2 v is

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An n-channel JFET has $${I_{{\text{DSS}}}} = 2\,{\text{mA}}$$ and V_p = -4 v. Its transconductance g_m = in (mA/V) for an applied gate to source voltage V_GS = -2 v is