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An n-type semiconductor has an electron concentration of 3 × 1020 m-3. If the electron drift velocity is 100 m/s in an electric field of 200 V/m, the conductivity (in $${\Omega ^{ - 1}}$$ m-1) of this material is

A. 24

B. 36

C. 48

D. 96

Answer: Option B


This Question Belongs to Engineering Physics >> Solid State Physics

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  1. Dhaleshwar Sahu
    Dhaleshwar Sahu:
    3 years ago

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In a cubic crystal, atoms of mass M1 lie on one set of planes and atoms of mass M2 lie on planes interleaved between those of the first set. If C is the forte constant between nearest neighbour planes, the frequency of lattice vibrations for the optical phonon branch with wave vector k = 0 is

A. $$\sqrt {2C\left( {\frac{1}{{{M_1}}} + \frac{1}{{{M_2}}}} \right)} $$

B. $$\sqrt {C\left( {\frac{1}{{2{M_1}}} + \frac{1}{{{M_2}}}} \right)} $$

C. $$\sqrt {C\left( {\frac{1}{{{M_1}}} + \frac{1}{{2{M_2}}}} \right)} $$

D. zero