Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 µm and width 100 µm. The product of electron mobility (µn) and oxide capacitance per unit are (Cox) is µnCox = 1 mA/V2. The threshold voltage of the transistor is 1 V. For a gate-to-source voltage VGS = [2 - sin(2t)] V and drain-to-source voltage VDS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is . . . . . . . .

This question belongs to Electronics And Communications Engineering Analog Electronics

Analog Electronics

Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 µm and width 100 µm. The product of electron mobility (µ_n) and oxide capacitance per unit are (C_ox) is µ_nC_ox = 1 mA/V². The threshold voltage of the transistor is 1 V. For a gate-to-source voltage V_GS = [2 - sin(2t)] V and drain-to-source voltage V_DS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is . . . . . . . .

A) 40 mA B) 20 mA C) 15 mA D) 5 mA

Answer & Solution

Correct Answer: Option C

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