Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 µm and width 100 µm. The product of electron mobility (µ_n) and oxide capacitance per unit are (C_ox) is µ_nC_ox = 1 mA/V². The threshold voltage of the transistor is 1 V. For a gate-to-source voltage V_GS = [2 - sin(2t)] V and drain-to-source voltage V_DS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is . . . . . . . .

A. 40 mA

B. 20 mA

C. 15 mA

D. 5 mA

Answer: Option C