1. A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to
2. As the Fermi energy of silver is 8.8 × 10-19 joule, the velocity of the fastest electron in silver at 0°K (Given: Rest mass of electron = 9.1 × 10-31 kg) is
3. The intrinsic carrier concentration of silicon sample at 300 K is 1.5 × 1016/m3. If after doping, the number of majority carriers is 5 × 1020/m3, the minority carrier density is
4. How many layers of material does a transistor have?
5. In JFET, when operated above the pinch-off voltage, the
6. In an intrinsic semiconductor, breaking of a covalent bond results in the generation of:
7. Depletion type MOSFET operates in:
8. What current does $${\text{I}} = {\text{Aq}}\left( {\frac{{{{\text{D}}_{\text{P}}}}}{{{{\text{L}}_{\text{P}}}{{\text{N}}_{\text{D}}}}} + \frac{{{{\text{D}}_{\text{n}}}}}{{{{\text{L}}_{\text{n}}}{{\text{N}}_{\text{A}}}}}} \right){\text{n}}_{\text{i}}^2,$$ represent in p-n junction diode? (Where the symbols have their usual meaning)
9. In a MOSFET, the pinch-off voltage refers to
10. Which of the following statements is not true for hole?
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