Fast gate can be built by keeping . . . . . . . .
A. Low output capacitance
B. High on resistance
C. High output capacitance
D. Input capacitance does not affect speed of the gate
Answer: Option A
Related Questions on VLSI Design and Testing
The dopants are introduced in the active areas of silicon by using which process?
A. Diffusion process
B. Ion Implantation process
C. Chemical Vapour Deposition
D. Either Diffusion or Ion Implantation Process
What are the advantages of E-beam masks?
A. Small feature size
B. Larger feature size
C. Looser layer
D. Complex design

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