For an intrinsic semiconductor, $$m_e^ * $$ and $$m_h^ * $$ are respectively, the effective masses of electrons and holes near the corresponding band edges. At a finite temperature, the position of the Fermi level
A. depends on $$m_e^ * $$ but not on $$m_h^ * $$
B. depends on $$m_h^ * $$ but not on $$m_e^ * $$
C. depends on both $$m_e^ * $$ and $$m_h^ * $$
D. depends neither on $$m_e^ * $$ nor on $$m_h^ * $$
Answer: Option C
This Question Belongs to Engineering Physics >> Electronics
A. is a common-emitter amplifier
B. uses a p-n-p transistor
C. is an oscillator
D. has a voltage gain less than one
A. 1 AND gate
B. 2 AND gates
C. 1 OR gate
D. 2 OR gates
A. the gain decreases by 10 times
B. the output resistance increases by 10 times
C. the fH increases by 100 times
D. the input resistance decreases by 100 times
The following circuit (where, RL ≫ R) performs the operation of
A. OR gate for a negative logic system
B. NAND gate for a negative logic system
C. AND gate for a positive logic system
D. AND gate for a negative logic system
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