Match List-I (Models of BJT) with List-II (Applications) and select the correct answer using the options given below the lists:
| List-I (Models of BJT) | List-II (Applications) |
| a. Hybrid model | 1. Microwave measurements |
| b. Hybrid pi-model | 2. Coupled diode |
| c. S-parameter | 3. Low frequency |
| d. Ebers-Moll model | 4. High frequency |
A. a-4, b-3, c-1, d-2
B. a-3, b-4, c-2, d-1
C. a-3, b-4, c-1, d-2
D. a-4, b-3, c-2, d-1
Answer: Option C
This Question Belongs to Electronics And Communications Engineering >> Analog Electronics
The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source
B. Current controlled voltage source
C. Voltage controlled voltage source
D. Voltage controlled current source
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side
B. The edge of the depletion region on the n-side
C. The p+n junction
D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load
B. Inductor between source and load
C. Capacitor between source and load
D. Either A or B
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