nMOS devices are formed in . . . . . . . .
A. p-type substrate of high doping level
B. n-type substrate of low doping level
C. p-type substrate of moderate doping level
D. n-type substrate of high doping level
Answer: Option C
This Question Belongs to Electronics And Communications Engineering >> VLSI Design And Testing
Related Questions on VLSI Design and Testing
The dopants are introduced in the active areas of silicon by using which process?
A. Diffusion process
B. Ion Implantation process
C. Chemical Vapour Deposition
D. Either Diffusion or Ion Implantation Process
What are the advantages of E-beam masks?
A. Small feature size
B. Larger feature size
C. Looser layer
D. Complex design
Join The Discussion