Silicon is doped with arsenic (concentration 10²⁰ atoms.m^-3). At room temperature, the electron and hole mobilities in Si are 0.14 m².v^-1.s^-1 and 0.05 m²v^-1.s^-1 respectively. The conductivity in (Ωm)^-1, at room temperature for Si doped with As is

A. decreases B. increases C. remains constant D. shows no systematic variation

A. Burger vector and the dislocation line are Parallel to each other for screw dislocations B. Burger vector and the dislocation line are perpendicular to each other for edge dislocations C. Screw dislocations glide parallel to its Burger vector D. Edge dislocations glide parallel to its Burger Vector

A. 210 B. 220 C. 222 D. 310

A. 18110 B. 18300 C. 19360 D. 19890