The current gain of a BJT is
A. $${{\text{g}}_{\text{m}}}{\text{ }}{{\text{r}}_{\text{o}}}$$
B. $$\frac{{{{\text{g}}_{\text{m}}}}}{{{{\text{r}}_{\text{o}}}}}$$
C. $${{\text{g}}_{\text{m}}}{\text{ }}{{\text{r}}_\pi }$$
D. $$\frac{{{{\text{g}}_{\text{m}}}}}{{{{\text{r}}_\pi }}}$$
Answer: Option C
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The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source
B. Current controlled voltage source
C. Voltage controlled voltage source
D. Voltage controlled current source
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side
B. The edge of the depletion region on the n-side
C. The p+n junction
D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load
B. Inductor between source and load
C. Capacitor between source and load
D. Either A or B
We know, current gain AV=hfe. In π model, hfe is referred to β.
We know, ri= β/gm.
From this, β=rigm.