The current of a certain Si-diode, when measured with a large reverse bias is found to be 10nA. What would be the current be if a forward bias of 2 V is applied? Assume that T = 300° K, η = 2.
A. 6.2 × 108 A
B. 6.2 × 10-8 A
C. 0.62 × 108 A
D. 0.62 × 10-8 A
Answer: Option A
This Question Belongs to Electronics And Communications Engineering >> Analog Electronics
The action of JFET in its equivalent circuit can best be represented as a
A. Current controlled Current source
B. Current controlled voltage source
C. Voltage controlled voltage source
D. Voltage controlled current source
In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at
A. The edge of the depletion region on the p-side
B. The edge of the depletion region on the n-side
C. The p+n junction
D. The center of the depletion region on the n-side
To prevent a DC return between source and load, it is necessary to use
A. Resistor between source and load
B. Inductor between source and load
C. Capacitor between source and load
D. Either A or B
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