The effective density of states at the conduction band edge of Ge is 1.04 × 1019 cm-3 at room temperature (300 K). Ge has an optical band gap of 0.66 eV. The intrinsic carrier concentration (in cm-3) in Ge at room temperature (300 K) is approximately
A. 3 × 1010
B. 3 × 1013
C. 3 × 1016
D. 6 × 1016
Answer: Option B

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